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KMID : 1059520100540040380
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Journal of the Korean Chemical Society
2010 Volume.54 No. 4 p.380 ~ p.386
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Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution
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Chon Jung-Kyoon
Kim Youn-Kyoo
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Abstract
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We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted Al₂O₃ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.
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KEYWORD
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Aluminum oxide, Passive film, Oxide film, n-Type semiconductor, Mott-Schottky, Al₂O₃, Al(OH) ³
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